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r09ds0032ej0200 rev.2.00 page 1 of 18 dec 19, 2011 the mark shows major revised points. the revised points can be easily searched by copying an "" in the pdf file and specifying it in the "find what:" field. preliminary data sheet pa862td npn silicon rf twin transistor (with 2 different elements) in a 6-pin lead-less minimold features ? low voltage operation ? 2 different built-in transistors (2sc5010, 2sc5801) q1: built-in high gain transistor f t = 12.0 ghz typ., ? s 21e ? 2 = 8.5 db typ. @ v ce = 3 v, i c = 10 ma, f = 2 ghz q2: built-in low phase distortion transistor suited for osc operation f t = 4.5 ghz typ., ? s 21e ? 2 = 4.0 db typ. @ v ce = 1 v, i c = 5 ma, f = 2 ghz ? 6-pin lead-less minimold package built-in transistors q1 q2 3-pin thin-type ultra super minimold part no. 2sc5010 2sc5801 ordering information part number order number quantity package supplying form pa862td pa862td-a 50 pcs (non reel) 6-pin lead -l ess minimold ? 8 mm wide embossed taping pa862td-t3 pa862td-t3-a 10 kpcs/reel (1208) (pb-free) ? pi n 1 (q1 collector), pin 6 (q1 base) face the perforation side of the tape remark to order evaluation samples, please contact your nearby sales office. unit sample quantity is 50 pcs. caution observe precautions when handling because these devi ces are sensitive to electrostatic discharge. r09ds0032ej0200 rev.2.00 dec 19, 2011
pa862td r09ds0032ej0200 rev.2.00 page 2 of 18 dec 19, 2011 absolute maximum ratings (t a = +25 c) parameter symbol ratings unit q1 q2 collector to base voltage v cbo 9 9 v collector to emitter voltage v ceo 6 5.5 v emitter to base voltage v ebo 2 1.5 v collector current i c 30 100 ma 180 190 total power dissipation p tot note 210 in 2 elements mw junction temperature t j 150 c storage temperature t stg ? 65 to +150 c note mounted on 1.08 cm 2 1.0 mm (t) glass epoxy pcb
pa862td r09ds0032ej0200 rev.2.00 page 3 of 18 dec 19, 2011 electrical characteristics (t a = +25 c) (1) q1 parameter symbol test conditi ons min. typ. max. unit collector cut-off current i cbo v cb = 5 v, i e = 0 ? ? 100 na emitter cut-off current i ebo v be = 1 v, i c = 0 ? ? 100 na dc current gain h fe note 1 v ce = 3 v, i c = 10 ma 75 110 150 ? gain bandwidth product f t v ce = 3 v, i c = 10 ma, f = 2 ghz 10.0 12.0 ? ghz insertion power gain ? s 21e ? 2 v ce = 3 v, i c = 10 ma, f = 2 ghz 7.0 8.5 ? db noise figure nf v ce = 3 v, i c = 3 ma, f = 2 ghz, z s = z opt ? 1.5 2.5 db reverse transfer capacitance c re note 2 v cb = 3 v, i e = 0, f = 1 mhz ? 0.4 0.7 pf (2) q2 parameter symbol test conditi ons min. typ. max. unit collector cut-off current i cbo v cb = 5 v, i e = 0 ? ? 600 na emitter cut-off current i ebo v be = 1 v, i c = 0 ? ? 600 na dc current gain h fe note 1 v ce = 1 v, i c = 5 ma 100 120 145 ? gain bandwidth product (1) f t v ce = 1 v, i c = 5 ma, f = 2 ghz 3.0 4.5 ? ghz gain bandwidth product (2) f t v ce = 1 v, i c = 15 ma, f = 2 ghz 5.0 6.5 ? ghz insertion power gain (1) ? s 21e ? 2 v ce = 1 v, i c = 5 ma, f = 2 ghz 3.0 4.0 ? db insertion power gain (2) ? s 21e ? 2 v ce = 1 v, i c = 15 ma, f = 2 ghz 4.5 5.5 ? db noise figure nf v ce = 1 v, i c = 10 ma, f = 2 ghz, z s = z opt ? 1.9 2.5 db reverse transfer capacitance c re note 2 v cb = 0.5 v, i e = 0, f = 1 mhz ? 0.6 0.8 pf notes 1. pulse measurement: pw 350 s, duty cycle 2% 2. collector to base capacitance when the emitter grounded h fe classification rank fb/yfb marking vy h fe value of q1 75 to 150 h fe value of q2 100 to 145
pa862td r09ds0032ej0200 rev.2.00 page 4 of 18 dec 19, 2011 typical characteristics (unless otherwise specified, t a = +25 c) 300 250 210 190 180 200 150 100 50 0 25 50 75 100 125 150 total power dissipation p tot (mw) ambient temperature t a (?c) total power dissipation vs. ambient temperature mounted on glass epoxy pcb (1.08 cm 2 1.0 mm (t) ) 2 elements in total q2 q1 q1 q2 reverse transfer capacitance c re (pf) collector to base voltage v cb (v) reverse transfer capacitance vs. collector to base voltage 0.5 0.4 0.3 0.2 0.1 0246810 f = 1 mhz reverse transfer capacitance c re (pf) collector to base voltage v cb (v) reverse transfer capacitance vs. collector to base voltage 1.0 0.8 0.6 0.4 0.2 0246810 f = 1 mhz remark the graphs indicate nominal characteristics.
pa862td r09ds0032ej0200 rev.2.00 page 5 of 18 dec 19, 2011 q1 q2 v ce = 1 v collector current i c (ma) base to emitter voltage v be (v) collector current vs. base to emitter voltage 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 v ce = 2 v collector current i c (ma) base to emitter voltage v be (v) collector current vs. base to emitter voltage 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 v ce = 1 v collector current i c (ma) base to emitter voltage v be (v) collector current vs. base to emitter voltage 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 v ce = 2 v collector current i c (ma) base to emitter voltage v be (v) collector current vs. base to emitter voltage 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 v ce = 3 v collector current i c (ma) base to emitter voltage v be (v) collector current vs. base to emitter voltage 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 remark the graphs indicate nominal characteristics.
pa862td r09ds0032ej0200 rev.2.00 page 6 of 18 dec 19, 2011 q1 q2 20 40 30 10 0 45 7 3 12 6 8 collector current i c (ma) collector to emitter voltage v ce (v) collector current vs. collector to emitter voltage i b = 30 a 60 a 90 a 150 a 180 a 210 a 120 a 240 a 270 a 300 a collector current i c (ma) collector to emitter voltage v ce (v) collector current vs. collector to emitter voltage 60 30 40 50 10 20 01234 56 7 i b = 40 a 320 a 280 a 240 a 200 a 160 a 120 a 80 a 360 a 400 a remark the graphs indicate nominal characteristics.
pa862td r09ds0032ej0200 rev.2.00 page 7 of 18 dec 19, 2011 q1 q2 1 000 100 10 1 0.1 10 100 dc current gain h fe collector current i c (ma) dc current gain vs. collector current v ce = 1 v 1 000 100 10 1 0.1 10 100 dc current gain h fe collector current i c (ma) dc current gain vs. collector current v ce = 2 v 1 000 100 10 1 0.1 10 100 dc current gain h fe collector current i c (ma) dc current gain vs. collector current v ce = 3 v 1 000 100 10 1 0.1 10 100 dc current gain h fe collector current i c (ma) dc current gain vs. collector current v ce = 1 v 1 000 100 10 1 0.1 10 100 dc current gain h fe collector current i c (ma) dc current gain vs. collector current v ce = 2 v remark the graphs indicate nominal characteristics.
pa862td r09ds0032ej0200 rev.2.00 page 8 of 18 dec 19, 2011 q1 q2 14 8 6 4 2 12 10 0 1 10 100 gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current v ce = 1 v f = 2 ghz 10 8 6 4 2 0 1 10 100 gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current v ce = 1 v f = 2 ghz 14 8 6 4 2 12 10 0 1 10 100 gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current v ce = 2 v f = 2 ghz 14 8 6 4 2 12 10 0 1 10 100 gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current v ce = 3 v f = 2 ghz 10 8 6 4 2 0 1 10 100 gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current v ce = 2 v f = 2 ghz remark the graphs indicate nominal characteristics.
pa862td r09ds0032ej0200 rev.2.00 page 9 of 18 dec 19, 2011 q1 q2 v ce = 1 v i c = 10 ma frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 35 30 25 20 15 10 5 0 0.1 1 10 mag msg |s 21e | 2 v ce = 2 v i c = 10 ma frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 35 30 25 20 15 10 5 0 0.1 1 10 mag msg |s 21e | 2 v ce = 3 v i c = 10 ma frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 35 30 25 20 15 10 5 0 0.1 1 10 mag msg |s 21e | 2 v ce = 1 v i c = 5 ma frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 35 30 25 20 15 10 5 0 0.1 1 10 mag msg |s 21e | 2 v ce = 2 v i c = 5 ma frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 35 30 25 20 15 10 5 0 0.1 1 10 mag msg |s 21e | 2 v ce = 1 v i c = 15 ma frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 35 30 25 20 15 10 5 0 0.1 1 10 mag msg |s 21e | 2 remark the graphs indicate nominal characteristics.
pa862td r09ds0032ej0200 rev.2.00 page 10 of 18 dec 19, 2011 q2 frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 35 30 25 20 15 10 5 0 0.1 1 10 v ce = 2 v i c = 15 ma mag msg |s 21e | 2 remark the graph indicates nominal characteristics.
pa862td r09ds0032ej0200 rev.2.00 page 11 of 18 dec 19, 2011 q1 q2 v ce = 1 v f = 1 ghz collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 25 20 10 5 15 0 1 10 100 mag msg |s 21e | 2 v ce = 1 v f = 4 ghz collector current i c (ma) insertion power gain, mag vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) 25 20 10 5 15 0 1 10 100 mag |s 21e | 2 v ce = 1 v f = 2 ghz collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 25 20 10 5 15 0 1 10 100 mag msg |s 21e | 2 v ce = 1 v f = 1 ghz collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 20 15 10 5 0 1 10 100 mag msg |s 21e | 2 v ce = 1 v f = 2 ghz collector current i c (ma) insertion power gain, mag vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) 15 10 5 0 ?5 1 10 100 |s 21e | 2 mag v ce = 1 v f = 4 ghz collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 15 10 5 0 ?5 ?10 1 10 100 mag msg |s 21e | 2 remark the graphs indicate nominal characteristics.
pa862td r09ds0032ej0200 rev.2.00 page 12 of 18 dec 19, 2011 q1 q2 v ce = 2 v f = 1 ghz collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 25 20 10 5 15 0 1 10 100 mag msg |s 21e | 2 v ce = 2 v f = 2 ghz collector current i c (ma) insertion power gain, mag vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) 15 10 5 0 ?5 1 10 100 |s 21e | 2 mag v ce = 2 v f = 4 ghz collector current i c (ma) insertion power gain, mag vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) 25 20 10 5 15 0 1 10 100 mag |s 21e | 2 v ce = 2 v f = 2 ghz collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 25 20 10 5 15 0 1 10 100 mag msg |s 21e | 2 v ce = 2 v f = 1 ghz collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 20 15 10 5 0 1 10 100 mag msg |s 21e | 2 v ce = 2 v f = 4 ghz collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 10 5 0 ?5 ?10 1 10 100 mag msg |s 21e | 2 remark the graphs indicate nominal characteristics.
pa862td r09ds0032ej0200 rev.2.00 page 13 of 18 dec 19, 2011 q1 v ce = 3 v f = 1 ghz collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 25 20 10 5 15 0 1 10 100 mag msg |s 21e | 2 v ce = 3 v f = 4 ghz collector current i c (ma) insertion power gain, mag vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) 25 20 10 5 15 0 1 10 100 mag |s 21e | 2 v ce = 3 v f = 2 ghz collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 25 20 10 5 15 0 1 10 100 mag msg |s 21e | 2 remark the graphs indicate nominal characteristics.
pa862td r09ds0032ej0200 rev.2.00 page 14 of 18 dec 19, 2011 q1 q2 10 8 6 4 2 0 20 16 12 4 8 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 1 v f = 1 ghz nf g a 10 8 6 4 2 0 20 16 12 4 8 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 1 v f = 2 ghz g a nf 10 8 6 4 2 0 20 16 12 4 8 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 1 v f = 1.5 ghz g a nf 6 5 3 2 1 4 0 18 15 12 9 6 3 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 1 v f = 1 ghz g a nf 6 5 3 2 1 4 0 18 15 12 9 6 3 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 1 v f = 1.5 ghz g a nf 6 5 3 2 1 4 0 18 15 12 9 6 3 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 1 v f = 2 ghz g a nf remark the graphs indicate nominal characteristics.
pa862td r09ds0032ej0200 rev.2.00 page 15 of 18 dec 19, 2011 q1 q2 10 8 6 4 2 0 20 16 12 4 8 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 2 v f = 1 ghz nf g a 10 8 6 4 2 0 20 16 12 4 8 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 2 v f = 2 ghz nf g a 10 8 6 4 2 0 20 16 12 4 8 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 2 v f = 1.5 ghz nf g a 6 5 3 2 1 4 0 18 15 12 9 6 3 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 2 v f = 1 ghz g a nf 6 5 3 2 1 4 0 18 15 12 9 6 3 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 2 v f = 1.5 ghz g a nf 6 5 3 2 1 4 0 18 15 12 9 6 3 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 2 v f = 2 ghz g a nf remark the graphs indicate nominal characteristics.
pa862td r09ds0032ej0200 rev.2.00 page 16 of 18 dec 19, 2011 q1 10 8 6 4 2 0 20 16 12 4 8 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 3 v f = 2 ghz nf g a 10 8 6 4 2 0 20 16 12 4 8 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 3 v f = 1.5 ghz nf g a 10 8 6 4 2 0 20 16 12 4 8 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 3 v f = 1 ghz nf g a remark the graphs indicate nominal characteristics.
pa862td r09ds0032ej0200 rev.2.00 page 17 of 18 dec 19, 2011 s-parameters s-parameters and noise parameters are provided on our web site in a format (s2p) that enabl es the direct import of the parameters to microwave circuit simulato rs without the need for keyboard inputs. click here to download s-parameters. [rf and microwave] [device parameters] url http://www2.renesas.com/microwave/en/download.html
pa862td r09ds0032ej0200 rev.2.00 page 18 of 18 dec 19, 2011 package dimensions 6-pin lead-less minimo ld (1208) (unit: mm) 0.50.05 0.125 +0.1 ?0.05 0.4 0.4 0.8 0.150.05 1.2 +0.07 ?0.05 0.8 +0.07 ?0.05 1.00.05 1 2 3 6 5 4 vy pin connections 1. collector (q1) 2. emitter (q1) 3. collector (q2) 4. base (q2) 5. emitter (q2) 6. base (q1) (top view) c1 e1 c2 b1 e2 b2 1 2 3 6 5 4 q1 q2 (bottom view) 0.6 0.2 0.1
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history pa862td data sheet description rev. date page summary ? july 2001 ? previous no. : p15685ej1v0ds00 2.00 dec 19, 2011 throughout deletion of s-parameters q1 , s-parameters q2 p.1 modification of features p.1 modification of built-in transistors p.1 modification of ordering information p.18 modification of package dimensions
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